Specific Process Knowledge/Thermal Process/Furnace Noble: Difference between revisions

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==Noble furnace==
==Noble furnace==
'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Furnace_Noble click here]'''


This furnace is used to grow oxide on metals or dirty wafers and to anneal wafers up to 1000 degree Celsius.
This furnace is used to grow oxide on metals or dirty wafers and to anneal wafers up to 1000 degree Celsius.

Revision as of 12:44, 11 October 2013

Noble furnace

Feedback to this page: click here


This furnace is used to grow oxide on metals or dirty wafers and to anneal wafers up to 1000 degree Celsius. The Noble furnace is located in service room 3.

A1 Bor Drive-in furnace. Positioned in cleanroom 2


The user manual, technical information and contact information can be found in LabManager:

Noble furnace

Overview of the performance of the Noble Furnace

Purpose Oxide growth, annealing
Process parameter range Process Temperature
  • 20-1000 oC
Process pressure
  • 1 atm
Gasses on the system
  • N2:0-5 sccm
  • O2: 0-5 sccm
Substrates Batch size
  • 1-25 4" wafer (or 2" wafers) per run
Substrate material allowed
  • Silicon wafers (new from the box or RCA cleaned)
  • Contact furnace@danchip.dtu.dk before annealing or oxidising metals in the furnace
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