Specific Process Knowledge/Thermal Process/Dope with Boron: Difference between revisions
No edit summary |
|||
| Line 1: | Line 1: | ||
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Dope_with_Boron click here]''' | |||
==Dope with boron== | ==Dope with boron== | ||
The furnace A2 boron predep can be used to pre-deposit silicon wafers with boron. The silicon wafers are positioned in a silicon carbide boat just next to wafers of boron nitride. Pre-deposit of boron is a diffusion process on the silicon wafers. | The furnace A2 boron predep can be used to pre-deposit silicon wafers with boron. The silicon wafers are positioned in a silicon carbide boat just next to wafers of boron nitride. Pre-deposit of boron is a diffusion process on the silicon wafers. | ||
Revision as of 12:30, 11 October 2013
Feedback to this page: click here
Dope with boron
The furnace A2 boron predep can be used to pre-deposit silicon wafers with boron. The silicon wafers are positioned in a silicon carbide boat just next to wafers of boron nitride. Pre-deposit of boron is a diffusion process on the silicon wafers.
The concentration of boron in the wafer depends on the process temperature. The depth profile depends of the process time.
- Boron profiles from SIMS
-
1 hour -
6 hours -
16 hours
<gallery caption="Boron profiles from SIMS " widths="200px" heights="200px" perrow="3"> image:borDiffusionDepthtable.jpg image:borDiffusionDepthplot.jpg