Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions
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* 4x4" wafers or | * 4x4" wafers or | ||
* 4x2" wafers | * 4x2" wafers | ||
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*1-25 wafers of 4" | *1-25 wafers of 4" | ||
*For other sizes ask the furnace team | *For other sizes ask the furnace team | ||
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*6x4" wafers or | *6x4" wafers or | ||
*6x6" wafers | *6x6" wafers | ||
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| Pre-clean | | Pre-clean | ||
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|RCA clean for wafers that are not fresh form the box. | |RCA clean for wafers that are not fresh form the box. | ||
|RF Ar clean | |RF Ar clean | ||
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| Layer thickness | | Layer thickness | ||
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|~50Å to 2µm, if thicker layers are needed please ask the furnace team. | |~50Å to 2µm, if thicker layers are needed please ask the furnace team. | ||
|10Å to about 3000Å | |10Å to about 3000Å | ||
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|- | |- | ||
| Deposition rate | | Deposition rate | ||
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*undoped, boron doped:~100Å/min | *undoped, boron doped:~100Å/min | ||
*Phospher doped:~20Å/min | *Phospher doped:~20Å/min | ||
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Dependent on process parameters, but in the order of 1 Å/s. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec|here.]] | Dependent on process parameters, but in the order of 1 Å/s. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec|here.]] | ||
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|Process temperature | |Process temperature | ||
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|560 <sup>o</sup>C (amorph) and 620 <sup>o</sup>C (poly) | |560 <sup>o</sup>C (amorph) and 620 <sup>o</sup>C (poly) | ||
|? | |? | ||
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|Step coverage | |Step coverage | ||
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|Adhesion | |Adhesion | ||
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|Good for fused silica, silicon oxide, silicon nitride, silicon | |Good for fused silica, silicon oxide, silicon nitride, silicon | ||
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|Substrate material allowed | |Substrate material allowed | ||
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|Fused silica, Silicon, oxide, nitride | |Fused silica, Silicon, oxide, nitride | ||
|Pyrex, fused silica, silicon, metals, oxide, nitride | |Pyrex, fused silica, silicon, metals, oxide, nitride | ||
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|Can be doped during deposition with Boron and/or Phosphorous | |Can be doped during deposition with Boron and/or Phosphorous | ||
| None | | None | ||
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Revision as of 09:42, 4 October 2013
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PolySilicon can be sputtered in Alcatel and be deposited in the PolySilicon furnace. In the chart below you can compare the two different deposition methodes:
| Sputter (Alcatel) | Sputter(PVD co-sputter/evaporation) | Furnace PolySi (Furnace LPCVD pSi) | Sputter (Wordentec) | Sputter IBSD IonfabIBE/IBSD Ionfab 300 | |
|---|---|---|---|---|---|
| Batch size |
|
|
.
|
|
. |
| Pre-clean | RF Ar clean | RF Ar clean | RCA clean for wafers that are not fresh form the box. | RF Ar clean | . |
| Layer thickness | 10Å to 1µm | 10Å to about 3000Å | ~50Å to 2µm, if thicker layers are needed please ask the furnace team. | 10Å to about 3000Å | . |
| Deposition rate | 2Å/s to 15Å/s | Dependent on process parameters, but in the order of 1 Å/s. See more here |
|
.
Dependent on process parameters, but in the order of 1 Å/s. See more here. |
. |
| Process temperature | ? | Option: heating wafer up to 400 deg C | 560 oC (amorph) and 620 oC (poly) | ? | . |
| Step coverage | Poor | . | Good | . | . |
| Adhesion | Bad for pyrex, for other materials we do not know | . | Good for fused silica, silicon oxide, silicon nitride, silicon | . | . |
| Substrate material allowed | Pyrex, fused silica, silicon, metals, oxide, nitride, blue tape | Pyrex, fused silica, silicon, metals, oxide, nitride | Fused silica, Silicon, oxide, nitride | Pyrex, fused silica, silicon, metals, oxide, nitride | . |
| Doping facility | None | None | Can be doped during deposition with Boron and/or Phosphorous | None | . |
Sputtered Silicon in the Alcatel
| The parameter(s) changed | New value(s) | Deposition rate |
|---|---|---|
| Standard parameters | None | |
| Power | 400W | 3.8 Å/s |
Sputtered Silicon in the PVD co-sputter/evaporation
See this page: Si sputter in PVD co-sputter/evaporation
Sputtered Silicon in Wordentec
See this page: Si sputter in Wordentec