Specific Process Knowledge/Lithography/DUVStepperLithography: Difference between revisions
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Usually the reticle is fabricated by an external company. It is recommended to send the mask design in GDS format to the Photolith group of Danchip, so that they can verify the mask design and order the mask. | Usually the reticle is fabricated by an external company. It is recommended to send the mask design in GDS format to the Photolith group of Danchip, so that they can verify the mask design and order the mask. | ||
*The SÜSS Spinner-Stepper is dedicated for spinning DUV resists. Please note that a Bottom Anti-Reflective Coating (BARC) is necessary to guarantee high quality of both the resist film and the exposure. Please find the specification of the SÜSS Spinner-Stepper in the LabAdviser [[http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/ | *The SÜSS Spinner-Stepper is dedicated for spinning DUV resists. Please note that a Bottom Anti-Reflective Coating (BARC) is necessary to guarantee high quality of both the resist film and the exposure. Please find the specification of the SÜSS Spinner-Stepper in the LabAdviser [[http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/DUVStepperLithography#SÜSS Spinner-Stepper]]. | ||
*Usually, in order to guarantee the highest fidelity of the produced pattern on the wafer the best suitable exposure dose has to be evaluated for each individual pattern, resist type and resist thickness. Thus it is recommended to perform an exposure dose test as a first test, when a new reticle is used. After evaluation by SEM the identified dose - that leads to the most accurate pattern - can be applied in the DUV process for the required wafers. | *Usually, in order to guarantee the highest fidelity of the produced pattern on the wafer the best suitable exposure dose has to be evaluated for each individual pattern, resist type and resist thickness. Thus it is recommended to perform an exposure dose test as a first test, when a new reticle is used. After evaluation by SEM the identified dose - that leads to the most accurate pattern - can be applied in the DUV process for the required wafers. | ||