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Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch): Difference between revisions

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|style="background:LightGrey; color:black"|Dry etch of ||style="background:WhiteSmoke; color:black"|
|style="background:LightGrey; color:black"|Dry etch of ||style="background:WhiteSmoke; color:black"|
*Silicon
*Silicon
*Silicon oxide
*Silicon (oxy)nitride
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|-
!style="background:silver; color:black" align="left"|Performance
!style="background:silver; color:black" align="left"|Performance
|style="background:LightGrey; color:black"|Etch rates||style="background:WhiteSmoke; color:black"|
|style="background:LightGrey; color:black"|Etch rates||style="background:WhiteSmoke; color:black"|
*Silicon: ~0.04-0.8 µm/min
*Silicon: ~4-6 µm/min (depending on features size and etch load)
*Silicon oxide:~0.02-0.15 µm/min
*Silicon (oxy)nitride:~0.02-? µm/min
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|style="background:silver; color:black" |.||style="background:LightGrey; color:black"|Anisotropy||style="background:WhiteSmoke; color:black"|
|style="background:silver; color:black" |.||style="background:LightGrey; color:black"|Anisotropy||style="background:WhiteSmoke; color:black"|
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!style="background:silver; color:black" align="left"|Process parameter range
!style="background:silver; color:black" align="left"|Process parameter range
|style="background:LightGrey; color:black"|Process pressure||style="background:WhiteSmoke; color:black"|
|style="background:LightGrey; color:black"|Process pressure||style="background:WhiteSmoke; color:black"|
*~20-200 mTorr
*~0.1-95 mTorr
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|-
|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Gas flows
|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Gas flows
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*SF<math>_6</math>: 0-130 sccm
*SF<math>_6</math>: 0-600 sccm
*O<math>_2</math>: 0-100 sccm
*O<math>_2</math>: 0-100 sccm
*CHF<math>_3</math>: 0-100 sccm
*C<math>_4</math>F<math>_8</math>: 0-300 sccm
*CF<math>_4</math>: 0-84 sccm
*Ar: 0-100 sccm
*H<math>_2</math>: ?sccm
*Ar: 0-145 sccm
*N<math>_2</math>: 0-100 sccm
*C<math>_2</math>F<math>_6</math>: 0-24 sccm
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!style="background:silver; color:black" align="left"|Substrates
!style="background:silver; color:black" align="left"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1 6" wafer per run
*1 4" wafer per run
*1 4" wafer per run
*1 2" wafer per run
*1 2" wafer per run
*Or several smaller pieces
*Or several smaller pieces on a carrier wafer
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|style="background:silver; color:black"|.|| style="background:LightGrey; color:black"|Substrate material allowed
|style="background:silver; color:black"|.|| style="background:LightGrey; color:black"|Substrate material allowed
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|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Photoresist/e-beam resist
*Photoresist/e-beam resist
*Silicon/PolySi
*PolySilicon
*Silicon oxide or silicon (oxy)nitride
*Silicon oxide or silicon (oxy)nitride
*Aluminium
*Aluminium
*Other metals if the coverage is <5% of the wafer area (ONLY PECVD3!)
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