Specific Process Knowledge/Lithography: Difference between revisions
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!Resist thickness range | !Resist thickness range | ||
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~0.5µm to 20µm | |||
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~50nm to 2µm | |||
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~30nm to 0.5 µm | |||
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~ 100nm to 2µm | |||
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droplet | |||
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2s-30s pr. wafer | 2s-30s pr. wafer | ||
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Process depended, depends on pattern, pattern area and dose | |||
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Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I | Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I | ||
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Process depended, depends also on heating and cooling temperature rates | |||
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Process depended, depends on pattern and dose | |||
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*Si, SiO2, SOI, quartz, pyrex, III-V materials | *Si, SiO2, SOI, quartz, pyrex, III-V materials | ||
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* | *Si, SiO2, SOI, quartz, pyrex, III-V materials | ||
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*Si, SiO2, SOI, quartz, pyrex, III-V materials | *Si, SiO2, SOI, quartz, pyrex, III-V materials | ||
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* | *Si, SiO2, SOI, quartz, pyrex, III-V materials | ||
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* | *Si, SiO2, SOI, quartz, pyrex, III-V materials | ||
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