Specific Process Knowledge/Lithography: Difference between revisions
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*UV sensitive: | *UV sensitive: | ||
**AZ | **AZ5214E, AZ4562 | ||
**AZ MiR 701, AZ nLOF 2020 | |||
**SU-8 | **SU-8 | ||
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!Resist thickness range | !Resist thickness range | ||
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*~0.5µm to 20µm | *~0.5µm to 20µm | ||
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*~50nm to 2µm? | *~50nm to 2µm? | ||
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!'''Allowed materials''' | !'''Allowed materials''' | ||
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* | *Si, SiO2, SOI, quartz, pyrex, III-V materials | ||
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*Allowed material 1 | *Allowed material 1 | ||
Revision as of 13:02, 16 September 2013

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Comparing lithography methods at DTU Danchip
| UV Lithography | DUV Stepper Lithography | E-beam Lithography | Nano Imprint Lithography | 2-Photon Polymerization Lithography | |
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| Generel description | Generel description - method 1 | Generel description - method 2 | Electron beam lithography | 4 | 5 |
| Pattern size range |
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| Resist type |
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| Resist thickness range |
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| Typical exposure time |
2s-30s pr. wafer |
?-? pr. ? |
Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I |
? pr. wafer |
? pr. µm2 |
| Substrate size |
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We have cassettes that fit to
Only one cassette can be loaded at time |
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| Allowed materials |
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