Specific Process Knowledge/Etch/Wet Platinum Etch: Difference between revisions
No edit summary |
No edit summary |
||
Line 1: | Line 1: | ||
'''Feedback to this page''': '''[mailto:wetchemistry@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Wet_Platinum_Etch click here]''' | '''Feedback to this page''': '''[mailto:wetchemistry@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Wet_Platinum_Etch click here]''' | ||
Ething of Platinum can be done either wet or dry. For wet etching please see below on this page. Dry etching can be done with [[Specific Process Knowledge/Etch/IBE/IBSD Ionfab 300|IBE]] by sputtering with Ar ions. | |||
==Wet Etching of Platinum== | |||
[[Image:Stinkskab RR2.jpg |300x300px|thumb|Wet Platinum Etch can be done in the fumehood positioned in cleanroom 2]] | [[Image:Stinkskab RR2.jpg |300x300px|thumb|Wet Platinum Etch can be done in the fumehood positioned in cleanroom 2]] |
Revision as of 08:22, 16 September 2013
Feedback to this page: click here
Ething of Platinum can be done either wet or dry. For wet etching please see below on this page. Dry etching can be done with IBE by sputtering with Ar ions.
Wet Etching of Platinum
Platinum can be etched by the following wet etch:
- HCl : HNO3 : H2O (7 : 1 : 8) at 85 °C
You have to be very carefully when you work with this etch. It can generate nitrous gases witch are very toxic!!
At this moment we do not have any information on the etch rate. You should be aware that this wet etch will also etch gold and it is not possible to use any masking material, it is used as a stripper.
Wet etching of Platinum is done by making your own setup in a glass beaker in the fumehood in cleanroom 2. Write content on the beaker and which metals has been etched with yellow permanent pen. You can see the APV here.
Platinum Etch data
Platinum wet etch | |
---|---|
General description |
Etch of Platinum |
Link to safety APV | see APV here. |
Chemical solution | HCl : HNO3 : H2O (7 : 1 : 8) |
Process temperature | 85 °C |
Possible masking materials | None |
Etch rate | Mainly used as stripper |
Batch size | 1-7 4" wafers at a time |
Size of substrate | Any that fits into a carrier that can go into the glass beaker |
Allowed materials | No restrictions.
Make a note on the beaker of which materials have been processed. |