Specific Process Knowledge/Etch/Wet Platinum Etch: Difference between revisions

Revision as of 11:08, 5 September 2013

Ething of Platinum can be done either wet or dry. For wet etching please see below on this page. Dry etching can be done with IBE by sputtering with Ar ions.

Platinum can be etched by the following wet etch:

HCl : HNO₃ : H₂O (7 : 1 : 8) at 85 °C

At this moment we do not have any information on the etch rate. You should be aware that this wet etch will also etch gold and it is not possible to use any masking material, it is used as a stripper.

Use the fumehood in cleanroom 2 for the setup. Use a glass beaker. Write content on beaker and which metals has been etched with yellow permanent pen.

Platinum Etch data

	Platinum wet etch
General description	Etch of Platinum
Link to safety APV	see APV here.
Chemical solution	HCl : HNO₃ : H₂O (7 : 1 : 8)
Process temperature	85 °C
Possible masking materials	None
Etch rate	Mainly used as stripper
Batch size	1-7 4" wafers at a time
Size of substrate	Any that fits into a carrier that can go into the glass beaker
Allowed materials	No restrictions. Make a note on the beaker of which materials have been processed.

@@ Line 56: / Line 56: @@
 |-style="background:WhiteSmoke; color:black"
 !Batch size
-|
+|1-7 4" wafers at a time
--7 4" wafers at a time
 |-
 |-style="background:LightGrey; color:black"
 !Size of substrate
-|
+|Any that fits into a carrier that can go into the glass beaker
-Any that fits into a carrier that can go into the glass beaker
 |-
+|-style="background:WhiteSmoke; color:black"
+!Allowed materials
+|No restrictions.
+Make a note on the beaker of which materials have been processed.
 |}