Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Au etch: Difference between revisions
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IBE Au etch with Ti mask
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![[Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride| | ![[Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride|Ti etch test with Zep520A as mask - To etch the Ti mask]] | ||
![[Specific Process Knowledge/Thin film deposition/PECVD| | ![[Specific Process Knowledge/Thin film deposition/PECVD|Au etch test with high selectivity to Ti]] | ||
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Revision as of 15:33, 28 August 2013
Results from the acceptance test in February 2011
Acceptance test for Au etch:
. | Acceptance Criteria |
Acceptance Results |
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Substrate information |
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Material to be etched |
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Mask information |
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Features to be etched |
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Etch depth |
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Etch rate |
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Etch rate uniformity |
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Reproducibility |
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Selectivity (Au etch rate/ZEP etch rate) |
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Etch profile |
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Process parameters for the acceptance test
Parameter | Au etch acceptance |
---|---|
Neutalizer current [mA] | 550 |
RF Power [W] | 1300 |
Beam current [mA] | 500 |
Beam voltage [V] | 600 |
Beam accelerator voltage | 400 |
Ar flow to neutralizer [sccm] | 5.0 |
Ar flow to beam [sccm] | 10.0 |
Rotation speed [rpm] | 20 |
Stage angle [degrees] | 30 |
Some SEM profile images of the etched Au
IBE Au etch with Ti mask ![Section under construction.jpg](/images/thumb/9/9a/Section_under_construction.jpg/70px-Section_under_construction.jpg)
Work has been started to find a good process for etching gold with a Titanium mask with high selektivity.
Ti etch test with Zep520A as mask - To etch the Ti mask | Au etch test with high selectivity to Ti | |
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Generel description | Generel description - method 1 | Generel description - method 2 |
Parameter 1 |
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Parameter 2 |
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Substrate size |
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Allowed materials |
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