Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Au etch: Difference between revisions
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[[image:IBE acceptance S18-AU-ZEP5.jpg|450x450px|thumb|center|s18-Au-ZEP5]] | [[image:IBE acceptance S18-AU-ZEP5.jpg|450x450px|thumb|center|s18-Au-ZEP5]] | ||
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==IBE Au etch with Ti mask== | ==IBE Au etch with Ti mask== | ||
Work has been started to find a good process for etching gold with a Titanium mask with high selektivity. | |||
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*<nowiki>#</nowiki> 50 mm wafers | |||
*<nowiki>#</nowiki> 100 mm wafers | |||
*<nowiki>#</nowiki> 150 mm wafers | |||
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*Allowed material 2 | |||
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Revision as of 14:40, 28 August 2013
Results from the acceptance test in February 2011
Acceptance test for Au etch:
. | Acceptance Criteria |
Acceptance Results |
---|---|---|
Substrate information |
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. |
Material to be etched |
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Mask information |
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. |
Features to be etched |
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. |
Etch depth |
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Etch rate |
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Etch rate uniformity |
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Reproducibility |
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Selectivity (Au etch rate/ZEP etch rate) |
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Etch profile |
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Process parameters for the acceptance test
Parameter | Au etch acceptance |
---|---|
Neutalizer current [mA] | 550 |
RF Power [W] | 1300 |
Beam current [mA] | 500 |
Beam voltage [V] | 600 |
Beam accelerator voltage | 400 |
Ar flow to neutralizer [sccm] | 5.0 |
Ar flow to beam [sccm] | 10.0 |
Rotation speed [rpm] | 20 |
Stage angle [degrees] | 30 |
Some SEM profile images of the etched Au
THIS PAGE IS UNDER CONSTRUCTION![Under construction.png](/images/thumb/f/f8/Under_construction.png/200px-Under_construction.png.jpeg)
IBE Au etch with Ti mask
Work has been started to find a good process for etching gold with a Titanium mask with high selektivity.
Method 1 | Method 2 | |
---|---|---|
Generel description | Generel description - method 1 | Generel description - method 2 |
Parameter 1 |
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Parameter 2 |
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Substrate size |
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Allowed materials |
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