Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300: Difference between revisions
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**[[/IBE Au etch|Au etch with zep520A as masking material]] | **[[/IBE Au etch|Au etch with zep520A as masking material]] | ||
**[[/IBE Ti etch|Ti etch with zep 520A as masking material]] | **[[/IBE Ti etch|Ti etch with zep 520A as masking material]] | ||
*[[/IBE magnetic stack etch|Magnetic stack containing Ta/MnIr/NiFe]] | *[[/IBE magnetic stack etch|Magnetic stack containing Ta/MnIr/NiFe]] | ||
*Etch in Stainless steel with X as masking material | *Etch in Stainless steel with X as masking material | ||
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**[[/Etch slow|Etch slow: resist can be removed with acetone after etch]] | **[[/Etch slow|Etch slow: resist can be removed with acetone after etch]] | ||
**[[/IBE Si etch|Si etching using AZ-resist at masking material]] | **[[/IBE Si etch|Si etching using AZ-resist at masking material]] | ||
**[[/IBE Au etch|Au etch with Ti as masking material]] | |||
===Deposition=== | ===Deposition=== | ||