Jump to content

Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions

← Older editNewer edit →
VisualWikitext
Kabi (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
1,146 edits
Kabi (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
1,146 edits
Line 404: Line 404:
|2"- 4" wafers or any that fits in a dedicated holder
|2"- 4" wafers or any that fits in a dedicated holder
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Allowed materials
!Allowed materials
Line 410: Line 409:
|All materials  
|All materials  
|All materials  
|All materials  
|
|-
|-style="background:LightGrey; color:black"
!Restrictions
|Wafers have to be cleaned in 7UP or RCA before further processing.
|No wafers with metal are allowed in this bath
|Wafers have to be cleaned in 7UP or RCA before further processing.
|Only for wafers with phosphor glass or boron glass that comes directly from one of the furnaces in stack A.
|None
|None
|-
|-
|}
|}
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/Wet_Silicon_Oxide_Etch_(BHF)"