Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions

@@ Line 253: / Line 253: @@
 |style="background:LightGrey; color:black"|Masking material
 |style="background:WhiteSmoke; color:black"|
-*Stoichiometric Si3N4
+*Silicon nitride
-*Silicon rich nitride SiN
+*Poly silicon
-*PECVD Si3N4
+*photoresist
-*Thermal SiO2
+*Blue film
 |style="background:WhiteSmoke; color:black"|
-*Stoichiometric Si3N4
+*Silicon nitride
-*Silicon rich nitride SiN
+*Poly silicon
-*PECVD Si3N4
+*photoresist
-*Thermal SiO2
+*Blue film
 |style="background:WhiteSmoke; color:black"|
-*Stoichiometric Si3N4
+*Photoresist
-*Silicon rich nitride SiN
+*Silicon nitride (Only on quartz wafers)
-*PECVD Si3N4
+*Poly silicon (Only on quartz wafers)
-*Thermal SiO2
+*Blue film
+*Chromium and gold
 |style="background:WhiteSmoke; color:black"|
-*Stoichiometric Si3N4
+*Silicon nitride
-*Silicon rich nitride SiN
+*Poly silicon
-*PECVD Si3N4
+*photoresist
-*Thermal SiO2
+*Blue film
-|-
 |-
 |style="background:LightGrey; color:black"|Lifetime of photoresist
 |style="background:WhiteSmoke; color:black"|
-*4” wafers
+*~½ hour
-*6” wafers
 |style="background:WhiteSmoke; color:black"|
-*4” wafers
+*~½ hour
 |style="background:WhiteSmoke; color:black"|
-*4” wafers
+*~½ hour
 |style="background:WhiteSmoke; color:black"|
-*2” wafers
+*~½ hour
-*4” wafers
-*Small pieces
 |-
 |}
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