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| Key facts for the different etch baths available at Danchip are resumed in the table: | | Key facts for the different etch baths available at Danchip are resumed in the table: |
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| ===KOH solutions===
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|
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| {| border="2" cellspacing="0" cellpadding="4" align="left"
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| !
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| ! 28 wt% KOH
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| ! 28 wt% KOH sat. with IPA
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| |-
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| |'''General description'''
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| |
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| :Etch of Si(100)
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| :Etch of Si(100) with boron etch-stop
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| |-
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| |'''Link to safety APV and KBA'''
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| |
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| :[http://www.labmanager.danchip.dtu.dk/d4Show.php?id=1906&mach=248 see APV here]
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| :[http://kemibrug.dk/KBA/CAS/106882/?show_KBA=1&portaldesign=1 see KBA here]
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| :[http://www.labmanager.danchip.dtu.dk/d4Show.php?id=1906&mach=49 see APV here]
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| :[http://kemibrug.dk/KBA/CAS/106882/?show_KBA=1&portaldesign=1 see KBA here]
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| |-
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| |'''Chemical solution'''
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| |
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| :KOH:H<sub>2</sub>O - 500 g : 1000 ml
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| |
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| :KOH:H<sub>2</sub>O:IPA - 500 g : 1000 ml : ?? ml
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| |-
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| |'''Process temperature'''
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| |
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| *60 <sup>o</sup>C
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| *70 <sup>o</sup>C
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| *80 <sup>o</sup>C (standard - fast etch)
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| |
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| :
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| *70 <sup>o</sup>C
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| |-
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| |'''Possible masking materials'''
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| |
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| *Stoichiometric Si<sub>3</sub>N<sub>4</sub>
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| *Si-rich Si<sub>3</sub>N<sub>4</sub>
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| *PECVD Si<sub>3</sub>N<sub>4</sub>
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| *Thermal SiO<sub>2</sub>
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| |
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| *Stoichiometric Si<sub>3</sub>N<sub>4</sub>
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| *Si-rich Si<sub>3</sub>N<sub>4</sub>
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| *PECVD Si<sub>3</sub>N<sub>4</sub>
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| *Thermal SiO<sub>2</sub>
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| |-
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| |'''Etch rate in Si'''
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| |
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| *~0.4 µm/min (60 <sup>o</sup>C)
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| *~0.7 µm/min (70 <sup>o</sup>C)
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| *~1.3 µm/min (80 <sup>o</sup>C)
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|
| |
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| *~0.2 µm/min (70 <sup>o</sup>C)
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| :in p<sup>++</sup> (doping level > 5x10<sup>19</sup> cm<sup>-3</sup>)
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|
| |
| |-
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| |'''Etch rate in SiO<sub>2</sub>'''
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| |
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| *~6nm/min (80 <sup>o</sup>C) ''theoretical value''
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| *~1.2nm/min (60 <sup>o</sup>C) ''theoretical value''
| |
| |.
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| |-
| |
| |'''Roughness'''
| |
| |
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| :Typical: 100-600 Å
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| |
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| :May form hillocks (pyramidal)
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|
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| |-
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| |'''Batch size'''
| |
| |
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| :1-25 wafers at a time
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| |
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| :1-25 wafer at a time
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| |-
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| |'''Size of substrate'''
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| |
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| :4" wafers
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| |
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| :4" wafers
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| |-
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| |'''Allowed materials'''
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| |
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| *Silicon
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| *Silicon Oxide
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| *Silicon Nitride
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| *Silicon Oxynitride
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| |
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| *Silicon
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| *Silicon Oxide
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| *Silicon Nitride
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| *Silicon Oxynitride
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| |-
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| |}
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|
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| <br clear="all" />
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|
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|
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|
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| <br clear="all" />
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|
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|
| ===KOH solutions=== | | ===KOH solutions=== |
