Jump to content

Specific Process Knowledge/Etch/KOH Etch: Difference between revisions

← Older editNewer edit →
VisualWikitext
Kabi (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
1,146 edits
Kabi (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
1,146 edits
Line 190: Line 190:
|style="background:LightGrey; color:black"|Temperature
|style="background:LightGrey; color:black"|Temperature
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon: ~0.04-0.8 µm/min
*Max 80 °C (standard etch)
*Silicon oxide: ~0.02-0.15 µm/min
*Silicon (oxy)nitride: ~0.02-? µm/min
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon: ~0.04-0.8 µm/min
*Max 80 °C (standard etch)
*Silicon oxide: ~0.02-0.15 µm/min
*Silicon (oxy)nitride: ~0.02-? µm/min
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon: ~0.04-0.8 µm/min
*Silicon: ~0.04-0.8 µm/min
Line 202: Line 198:
*Silicon (oxy)nitride: ~0.02-? µm/min
*Silicon (oxy)nitride: ~0.02-? µm/min
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon: ~0.04-0.8 µm/min
*Max 80 °C
*Silicon oxide: ~0.02-0.15 µm/min
*Silicon (oxy)nitride: ~0.02-? µm/min
|-
|-
|style="background:LightGrey; color:black"|Chemical solution
|style="background:LightGrey; color:black"|Chemical solution
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/KOH_Etch"