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Specific Process Knowledge/Etch/KOH Etch: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
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Kabi (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
1,146 edits
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*0.7 µm/min (70 °C)
*0.7 µm/min (70 °C)
*0.2 µm/min (70 °C)  
*0.2 µm/min (70 °C) for Boron doped Si (doping level > 5x10<sup>19</sup> cm<sup>-3</sup>)
*for Boron doped Si (doping level > 5x10<sup>19</sup> cm<sup>-3</sup>)
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*Somewhat lower than in the dedicated baths. Approximately 1 µm/min @ 80 °C in 28 wt%
*Somewhat lower than in the dedicated baths. Approximately 1 µm/min @ 80 °C in 28 wt%
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|style="background:LightGrey; color:black"|Etch rates in Thermal SiO2  
|style="background:LightGrey; color:black"|Etch rates in Thermal SiO2  
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*Silicon: ~0.04-0.8 µm/min
*Theoretical values:
*Silicon oxide: ~0.02-0.15 µm/min
*1.2 nm/min (60 °C)
*Silicon (oxy)nitride: ~0.02-? µm/min
*6 nm/min (80 °C)
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*Silicon: ~0.04-0.8 µm/min
*Theoretical values:
*Silicon oxide: ~0.02-0.15 µm/min
*1.2 nm/min (60 °C)
*Silicon (oxy)nitride: ~0.02-? µm/min
*6 nm/min (80 °C)
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*Silicon: ~0.04-0.8 µm/min
*Silicon oxide: ~0.02-0.15 µm/min
*Silicon (oxy)nitride: ~0.02-? µm/min
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*Silicon: ~0.04-0.8 µm/min
*Silicon oxide: ~0.02-0.15 µm/min
*Silicon (oxy)nitride: ~0.02-? µm/min
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|style="background:LightGrey; color:black"|Roughness
|style="background:LightGrey; color:black"|Roughness
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*Silicon: ~0.04-0.8 µm/min
*Typical: 100-600 Å
*Silicon oxide: ~0.02-0.15 µm/min
*Silicon (oxy)nitride: ~0.02-? µm/min
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*Silicon: ~0.04-0.8 µm/min
*Typical: 100-600 Å
*Silicon oxide: ~0.02-0.15 µm/min
*Silicon (oxy)nitride: ~0.02-? µm/min
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*Silicon: ~0.04-0.8 µm/min
*May form hillocks (pyramidal)
*Silicon oxide: ~0.02-0.15 µm/min
*Silicon (oxy)nitride: ~0.02-? µm/min
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*Silicon: ~0.04-0.8 µm/min
*Typical worse than KOH2 and KOH3
*Silicon oxide: ~0.02-0.15 µm/min
*Silicon (oxy)nitride: ~0.02-? µm/min
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|style="background:LightGrey; color:black"|Anisotropy
|style="background:LightGrey; color:black"|Anisotropy
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