Specific Process Knowledge/Etch/KOH Etch: Difference between revisions

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 |style="background:LightGrey; color:black"|Etch rates in crystalline silicon (100)
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-*Silicon: ~0.04-0.8 µm/min
+.4 µm/min (60 oC)
-*Silicon oxide: ~0.02-0.15 µm/min
+.7 µm/min (70 oC)
-*Silicon (oxy)nitride: ~0.02-? µm/min
+.3 µm/min (80 oC)
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-*Silicon: ~0.04-0.8 µm/min
+.4 µm/min (60 oC)
-*Silicon oxide: ~0.02-0.15 µm/min
+.7 µm/min (70 oC)
-*Silicon (oxy)nitride: ~0.02-? µm/min
+.3 µm/min (80 oC)
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-*Silicon: ~0.04-0.8 µm/min
+.7 µm/min (70 oC)
-*Silicon oxide: ~0.02-0.15 µm/min
+.2 µm/min (70 oC) for Boron doped Si (doping level > 5x1019 cm-3)
-*Silicon (oxy)nitride: ~0.02-? µm/min
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-*Silicon: ~0.04-0.8 µm/min
+Somewhat lower than in the dedicated baths. Approximately  1 µm/min @ 80 °C in 28 wt%
-*Silicon oxide: ~0.02-0.15 µm/min
-*Silicon (oxy)nitride: ~0.02-? µm/min
 |-
 |style="background:LightGrey; color:black"|Etch rates in Thermal SiO2
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 *Silicon (oxy)nitride: ~0.02-? µm/min
 |-
-|style="background:LightGrey; color:black"|Chemical solutions
+|style="background:LightGrey; color:black"|Chemical solution
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 *Silicon: ~0.04-0.8 µm/min