Specific Process Knowledge/Etch/KOH Etch: Difference between revisions
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|style="background:LightGrey; color:black"|Chemical solutions | |style="background:LightGrey; color:black"|Chemical solutions | ||
|style="background:WhiteSmoke; color:black"| | |||
*Silicon: ~0.04-0.8 µm/min | |||
*Silicon oxide: ~0.02-0.15 µm/min | |||
*Silicon (oxy)nitride: ~0.02-? µm/min | |||
|style="background:WhiteSmoke; color:black"| | |||
*Silicon: ~0.04-0.8 µm/min | |||
*Silicon oxide: ~0.02-0.15 µm/min | |||
*Silicon (oxy)nitride: ~0.02-? µm/min | |||
|style="background:WhiteSmoke; color:black"| | |||
*Silicon: ~0.04-0.8 µm/min | |||
*Silicon oxide: ~0.02-0.15 µm/min | |||
*Silicon (oxy)nitride: ~0.02-? µm/min | |||
|style="background:WhiteSmoke; color:black"| | |||
*Silicon: ~0.04-0.8 µm/min | |||
*Silicon oxide: ~0.02-0.15 µm/min | |||
*Silicon (oxy)nitride: ~0.02-? µm/min | |||
|- | |||
!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Substrates | |||
|style="background:LightGrey; color:black"|Batch size | |||
|style="background:WhiteSmoke; color:black"| | |||
*Silicon: ~0.04-0.8 µm/min | |||
*Silicon oxide: ~0.02-0.15 µm/min | |||
*Silicon (oxy)nitride: ~0.02-? µm/min | |||
|style="background:WhiteSmoke; color:black"| | |||
*Silicon: ~0.04-0.8 µm/min | |||
*Silicon oxide: ~0.02-0.15 µm/min | |||
*Silicon (oxy)nitride: ~0.02-? µm/min | |||
|style="background:WhiteSmoke; color:black"| | |||
*Silicon: ~0.04-0.8 µm/min | |||
*Silicon oxide: ~0.02-0.15 µm/min | |||
*Silicon (oxy)nitride: ~0.02-? µm/min | |||
|style="background:WhiteSmoke; color:black"| | |||
*Silicon: ~0.04-0.8 µm/min | |||
*Silicon oxide: ~0.02-0.15 µm/min | |||
*Silicon (oxy)nitride: ~0.02-? µm/min | |||
|- | |||
|style="background:LightGrey; color:black"|Size of substrate | |||
|style="background:WhiteSmoke; color:black"| | |||
*Silicon: ~0.04-0.8 µm/min | |||
*Silicon oxide: ~0.02-0.15 µm/min | |||
*Silicon (oxy)nitride: ~0.02-? µm/min | |||
|style="background:WhiteSmoke; color:black"| | |||
*Silicon: ~0.04-0.8 µm/min | |||
*Silicon oxide: ~0.02-0.15 µm/min | |||
*Silicon (oxy)nitride: ~0.02-? µm/min | |||
|style="background:WhiteSmoke; color:black"| | |||
*Silicon: ~0.04-0.8 µm/min | |||
*Silicon oxide: ~0.02-0.15 µm/min | |||
*Silicon (oxy)nitride: ~0.02-? µm/min | |||
|style="background:WhiteSmoke; color:black"| | |||
*Silicon: ~0.04-0.8 µm/min | |||
*Silicon oxide: ~0.02-0.15 µm/min | |||
*Silicon (oxy)nitride: ~0.02-? µm/min | |||
|- | |||
|style="background:LightGrey; color:black"|Allowed materials | |||
|style="background:WhiteSmoke; color:black"| | |||
*Silicon: ~0.04-0.8 µm/min | |||
*Silicon oxide: ~0.02-0.15 µm/min | |||
*Silicon (oxy)nitride: ~0.02-? µm/min | |||
|style="background:WhiteSmoke; color:black"| | |||
*Silicon: ~0.04-0.8 µm/min | |||
*Silicon oxide: ~0.02-0.15 µm/min | |||
*Silicon (oxy)nitride: ~0.02-? µm/min | |||
|style="background:WhiteSmoke; color:black"| | |||
*Silicon: ~0.04-0.8 µm/min | |||
*Silicon oxide: ~0.02-0.15 µm/min | |||
*Silicon (oxy)nitride: ~0.02-? µm/min | |||
|style="background:WhiteSmoke; color:black"| | |||
*Silicon: ~0.04-0.8 µm/min | |||
*Silicon oxide: ~0.02-0.15 µm/min | |||
*Silicon (oxy)nitride: ~0.02-? µm/min | |||
|- | |||
|style="background:LightGrey; color:black"|Masking material | |||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Silicon: ~0.04-0.8 µm/min | *Silicon: ~0.04-0.8 µm/min | ||