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| =<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
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| ===KOH solutions===
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| {| border="2" cellspacing="0" cellpadding="2"
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| !colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
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| |style="background:WhiteSmoke; color:black"|<b>KOH3</b>
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| |style="background:WhiteSmoke; color:black"|<b>KOH2</b>
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| |-
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| !style="background:silver; color:black;" align="center" width="60"|Purpose
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| |style="background:LightGrey; color:black"|Wet etch of
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| |style="background:WhiteSmoke; color:black"|
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| *Silicon
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| *Silicon oxide
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| *Silicon (oxy)nitride
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| *Resist
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| |style="background:WhiteSmoke; color:black"|
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| *Silicon
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| *Silicon oxide
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| *Silicon (oxy)nitride
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| *Resist and other polymers
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| |-
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| !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
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| |style="background:LightGrey; color:black"|Etch rates
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| |style="background:WhiteSmoke; color:black"|
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| *Silicon: ~0.04-0.8 µm/min
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| *Silicon oxide: ~0.02-0.15 µm/min
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| *Silicon (oxy)nitride: ~0.02-? µm/min
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| |style="background:WhiteSmoke; color:black"|
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| *Silicon: ~0.04-0.8 µm/min
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| *Silicon oxide: ~0.02-0.15 µm/min
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| *Silicon (oxy)nitride: ~0.02-? µm/min
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