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==Plasma asher 1 - ''All purpose''==
= Comparison table =
{| border="2" cellspacing="0" cellpadding="2"
 
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#KS Aligner|KS Aligner]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#EVG Aligner|EVG Aligner]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#III-V Aligner|III-V Aligner]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Inclined UV Lamp|Inclined UV Lamp]]</b>
 
|-
!style="background:silver; width:100px; color:black;" align="center"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
*TS and BS Alignment
*UV exposure
|style="background:WhiteSmoke; color:black"|
*TS and BS Alignment
*UV exposure
|style="background:WhiteSmoke; color:black"|
*TS Alignment
*UV exposure
|
 
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Performance
|style="background:LightGrey; color:black"|Minimum feature size
|style="background:WhiteSmoke; color:black"|
*1.25µm down to 1.0µm
|style="background:WhiteSmoke; color:black"|
*1.25µm
|style="background:WhiteSmoke; color:black"|
|
 
|-
|style="background:LightGrey; color:black"|Exposure light/filters/spectrum
|style="background:WhiteSmoke; color:black"|
* 350W Hg-lamp, 365nm filter, 303nm filter optional
* intensity in Constant Intensity(CI) mode 7mJ/cm2
|style="background:WhiteSmoke; color:black"|
* 350W Hg-lamp, SU8 filter, 365nm filter optional
* intensity in Constant Intensity(CI) mode 7mJ/cm2
|style="background:WhiteSmoke; color:black"|
*
|style="background:WhiteSmoke; color:black"|
*
 
|-
|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black"|
*proximity, soft, hard, vacuum contact
|style="background:WhiteSmoke; color:black"|
*proximity, soft, hard, vacuum contact
*proximity, soft, hard, vacuum contact
|style="background:WhiteSmoke; color:black"|
*
|style="background:WhiteSmoke; color:black"|
*
 
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
|style="background:LightGrey; color:black"|Positive Process
|style="background:WhiteSmoke; color:black"|
*
|style="background:WhiteSmoke; color:black"|
*
|style="background:WhiteSmoke; color:black"|
*
|style="background:WhiteSmoke; color:black"|
*
 
|-
|style="background:LightGrey; color:black"|Negative Process
|style="background:WhiteSmoke; color:black"|
*
|style="background:WhiteSmoke; color:black"|
*
|style="background:WhiteSmoke; color:black"|
*
|style="background:WhiteSmoke; color:black"|
*
 
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
*<nowiki>1</nowiki> small samples
*<nowiki>1</nowiki> 50 mm wafers
*<nowiki>1</nowiki> 100 mm wafers
*<nowiki>1</nowiki> 150 mm wafers
|style="background:WhiteSmoke; color:black"|
*<nowiki>1</nowiki> 50 mm wafers
*<nowiki>1</nowiki> 100 mm wafers
*<nowiki>25</nowiki> 150 mm wafers with automatic handling
|style="background:WhiteSmoke; color:black"|
*<nowiki>1</nowiki> small samples
*<nowiki>1</nowiki> 50 mm wafers
*<nowiki>1</nowiki> 100 mm wafers
*<nowiki>1</nowiki> 150 mm wafers
|style="background:WhiteSmoke; color:black"|
*
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
*Si and silicon oxide, silicon nitride
*Quartz, pyrex
|style="background:WhiteSmoke; color:black"|
*Si and silicon oxide, silicon nitride
*Quartz, pyrex
|style="background:WhiteSmoke; color:black"|
*III-V compounds
|style="background:WhiteSmoke; color:black"|
*
|-
|}
 
<br clear="all" />
 
 
 
=Plasma asher 1 =
[[Image:plasmaasher2.JPG|322 × 324px|thumb|The PlasmaAsher1 is placed in Cleanroom 3.]]
[[Image:plasmaasher2.JPG|322 × 324px|thumb|The PlasmaAsher1 is placed in Cleanroom 3.]]


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===Overview of typical processes===
==Overview of typical processes==


{| border="2" cellspacing="0" cellpadding="4" align="left"
{| border="2" cellspacing="0" cellpadding="4" align="left"
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A typical process time for stripping of 1.5 µm AZ5214e resist is 15-25 min and for stripping of 9.5 µm AZ4562 resist is 20-35 min with the process parameters: 210ml O<math>_2</math>/min or mixture of 210ml O<math>_2</math>/min and 70ml N<math>_2</math>/min, power 1000W.
A typical process time for stripping of 1.5 µm AZ5214e resist is 15-25 min and for stripping of 9.5 µm AZ4562 resist is 20-35 min with the process parameters: 210ml O<math>_2</math>/min or mixture of 210ml O<math>_2</math>/min and 70ml N<math>_2</math>/min, power 1000W.


==Plasma asher 2 - ''Clean/no metals''==
=Plasma asher 2 =
[[Image:Plasma_Asher_6inch.jpg|300x300px|thumb|Plasma asher for removing AZ resist on 6" wafers: positioned in cleanroom ? (class 10 yellow room)]]
[[Image:Plasma_Asher_6inch.jpg|300x300px|thumb|Plasma asher for removing AZ resist on 6" wafers: positioned in cleanroom ? (class 10 yellow room)]]


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<br clear="all" />
<br clear="all" />


==Lift-off wet bench==
=Lift-off wet bench=
[[Image:Acetone_lift-off.jpg|300x300px|thumb|Acetone lift-off: positioned in cleanroom 3]]
[[Image:Acetone_lift-off.jpg|300x300px|thumb|Acetone lift-off: positioned in cleanroom 3]]
This bench is only for wafers with metal!
This bench is only for wafers with metal!
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<br clear="all" />
<br clear="all" />


==Overview of acetone benches==
=Overview of acetone benches=


{| border="2" cellspacing="0" cellpadding="4" align="left"
{| border="2" cellspacing="0" cellpadding="4" align="left"
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