Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions
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*PECVD1 (standard):~147nm/min | *PECVD1 (standard):~147nm/min | ||
*TEOS:~265nm/min | *TEOS:~265nm/min | ||
*Stoichiometric Si3N4:~0.75nm/min (Morten Bo Mikkelsen, March 2013) | *Stoichiometric Si3N4: ~0.75nm/min (Morten Bo Mikkelsen, March 2013) | ||
*Low stress Si3N4: ~0.38 nm/min (Eric Jensen, Juni 2013) | |||
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*Wet thermal oxide:~25nm/min | *Wet thermal oxide:~25nm/min | ||