Specific Process Knowledge/Etch/RIE (Reactive Ion Etch): Difference between revisions
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*Can vary from isotropic to anisotropic with vertical sidewalls and on to a physical etch were the sidewalls are angled but without etching under the mask. | *Can vary from isotropic to anisotropic with vertical sidewalls and on to a physical etch were the sidewalls are angled but without etching under the mask. | ||
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!style="background:silver; color:black" align="left"|Process parameter range | |||
|style="background:WhiteSmoke; color:black"| | |style="background:LightGrey; color:black"|Process pressure||style="background:WhiteSmoke; color:black"| | ||
*~20-200 mTorr | *~20-200 mTorr | ||
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