Specific Process Knowledge/Etch/Wet Polysilicon Etch: Difference between revisions
No edit summary |
|||
| Line 18: | Line 18: | ||
===PolySi Etch data=== | ===PolySi Etch data=== | ||
{| border=" | {|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" | ||
|- | |||
|-style="background:silver; color:black" | |||
! | ! | ||
! PolySi Etch @ room temperature | ! PolySi Etch @ room temperature | ||
|- | |- | ||
| | |||
|-style="background:WhiteSmoke; color:black" | |||
!General description | |||
| | | | ||
Etch of poly-si/Si(100) | Etch of poly-si/Si(100) | ||
|- | |- | ||
| | |||
|-style="background:LightGrey; color:black" | |||
!Chemical solution | |||
|HNO<sub>3</sub> : BHF : H<sub>2</sub>O (20 : 1 : 20) | |HNO<sub>3</sub> : BHF : H<sub>2</sub>O (20 : 1 : 20) | ||
|- | |- | ||
| | |||
|-style="background:WhiteSmoke; color:black" | |||
!Process temperature | |||
|Room temperature | |Room temperature | ||
|- | |- | ||
| | |||
|-style="background:LightGrey; color:black" | |||
!Possible masking materials | |||
| | | | ||
*Photoresist(min. 2.2 µm is recommended) | *Photoresist(min. 2.2 µm is recommended) | ||
*LPCVD-oxide (TEOS) | *LPCVD-oxide (TEOS) | ||
|- | |- | ||
| | |||
|-style="background:WhiteSmoke; color:black" | |||
!Etch rate | |||
| | | | ||
*R<sub>Si</sub> ~1000-2000 Å/min (depending on doping level) | *R<sub>Si</sub> ~1000-2000 Å/min (depending on doping level) | ||
| Line 44: | Line 56: | ||
*Photoresist (2.2 µm) withstand ~20-30 min | *Photoresist (2.2 µm) withstand ~20-30 min | ||
|- | |- | ||
| | |||
|-style="background:LightGrey; color:black" | |||
!Batch size | |||
| | | | ||
1-25 wafers at a time | 1-25 wafers at a time | ||
|- | |- | ||
| | |||
|-style="background:WhiteSmoke; color:black" | |||
!Size of substrate | |||
| | | | ||
2-4" wafers | 2-4" wafers | ||
|- | |- | ||
|} | |} | ||