Specific Process Knowledge/Etch/Wet Gold Etch: Difference between revisions
No edit summary |
No edit summary |
||
Line 31: | Line 31: | ||
| | | | ||
Etch of pure Gold (as stripper). | Etch of pure Gold (as stripper). | ||
|- | |||
|-style="background:LightGrey; color:black" | |||
!Link to safety APV and KBA | |||
|[http://www.labmanager.danchip.dtu.dk/d4Show.php?id=2479&mach=146 see APV here]. | |||
[http://kemibrug.dk/KBA/CAS/107388/?show_KBA=1&portaldesign=1 see KBA here] | |||
|[http://www.labmanager.danchip.dtu.dk/d4Show.php?id=2479&mach=146 see APV here] | |||
|- | |- | ||
|- | |- | ||
|-style="background: | |-style="background:WhiteSmoke; color:black" | ||
!Chemical solution | !Chemical solution | ||
|KI:I<sub>2</sub>:H<sub>2</sub>O (100g:25g:500ml) | |KI:I<sub>2</sub>:H<sub>2</sub>O (100g:25g:500ml) | ||
Line 41: | Line 48: | ||
|- | |- | ||
|-style="background: | |-style="background:LightGrey; color:black" | ||
!Process temperature | !Process temperature | ||
|20 <sup>o</sup>C | |20 <sup>o</sup>C | ||
Line 50: | Line 57: | ||
|- | |- | ||
|-style="background: | |-style="background:WhiteSmoke; color:black" | ||
!Possible masking materials | !Possible masking materials | ||
| | | | ||
Line 59: | Line 66: | ||
|- | |- | ||
|-style="background: | |-style="background:LightGrey; color:black" | ||
!Etch rate | !Etch rate | ||
| | | | ||
Line 68: | Line 75: | ||
|- | |- | ||
|-style="background: | |-style="background:WhiteSmoke; color:black" | ||
!Batch size | !Batch size | ||
| | | | ||
Line 77: | Line 84: | ||
|- | |- | ||
|-style="background: | |-style="background:LightGrey; color:black" | ||
!Size of substrate | !Size of substrate | ||
| | | |
Revision as of 11:00, 3 June 2013
Ething of Gold can be done either wet or dry. For wet etching please see below on this page. Dry etching can be done with IBE by sputtering with Ar ions.
Etching of Gold
Etching of Gold is done wet at Danchip making your own set up in a beaker in the fumehood. You can see the APV here.
We have two different solutions:
- Iodine etch: KI:I2:H2O - 100g:25g:500ml - standard at Danchip. Can be used with AZ resist as mask.
- Aqua Regia (Kongevand): HNO3:HCl - 1:3 - A very strong acid witch will etch most metals and are therefore used when you wish to remove all the gold from your wafer. you have to be very carefull when you work with Aqua Regia (Kongevand) It can generate nitrous gases witch are very toxic!!
Comparing the two solutions
Iodine based gold etch | Aqua Regia (Kongevand) | |
---|---|---|
General description |
Etch of pure Gold with or without photoresist mask. |
Etch of pure Gold (as stripper). |
Link to safety APV and KBA | see APV here. | see APV here |
Chemical solution | KI:I2:H2O (100g:25g:500ml) | HCl:HNO3 (3:1) |
Process temperature | 20 oC | 20 oC |
Possible masking materials |
Photoresist (1.5 µm AZ5214E) |
Unmasked - used as a stripper |
Etch rate |
~100 nm/min |
~(??) nm/min - fast etch |
Batch size |
1-5 4" wafers at a time |
1-5 4" wafer at a time |
Size of substrate |
2-6" wafers |
2-6" wafers |