|
|
| Line 9: |
Line 9: |
|
| |
|
| TEOS can be used as an alternative to thermally grown or PECVD oxide, it has a dielectric constant of 3.56 (For thermal oxide it is 3.46). Furthermore TEOS has a very high surface mobility enabling it to fill holes that has a large aspect ratio and leaving the surface quite smooth see figure 2, hence it also covers corners and side walls very well. | | TEOS can be used as an alternative to thermally grown or PECVD oxide, it has a dielectric constant of 3.56 (For thermal oxide it is 3.46). Furthermore TEOS has a very high surface mobility enabling it to fill holes that has a large aspect ratio and leaving the surface quite smooth see figure 2, hence it also covers corners and side walls very well. |
|
| |
| '''The user manual(s), technical information and contact information can be found in LabManager:'''
| |
|
| |
| '''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=85 Furnace: LPCVD TEOS (B3)]'''
| |
|
| |
| ==Overview of the performance of the boron drive-in furnace and some process related parameters==
| |
|
| |
| {| border="2" cellspacing="0" cellpadding="0"
| |
| |-
| |
| !style="background:silver; color:black;" align="center"|Purpose
| |
| |style="background:LightGrey; color:black"|Drive-in of boron, oxidation of silicon and boron phase layer and annealing of the oxide
| |
| |style="background:WhiteSmoke; color:black"|Oxidation:
| |
| *Dry
| |
| *Wet: with torch (H<sub>2</sub>+O<sub>2</sub>)
| |
| |-
| |
| !style="background:silver; color:black" align="center"|Performance
| |
| |style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"|
| |
| *Dry SiO<sub>2</sub>: 50 Å to ~2000 Å (takes too long to make it thicker)
| |
| *Wet SiO<sub>2</sub>: 50 Å to ~3 µm (takes too long to make it thicker)
| |
| |-
| |
| !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
| |
| |style="background:LightGrey; color:black"|Process Temperature
| |
| |style="background:WhiteSmoke; color:black"|
| |
| *800-1150 <sup>o</sup>C
| |
| |-
| |
| |style="background:LightGrey; color:black"|Process pressure
| |
| |style="background:WhiteSmoke; color:black"|
| |
| *1 atm
| |
| |-
| |
| |style="background:LightGrey; color:black"|Gasses on the system
| |
| |style="background:WhiteSmoke; color:black"|
| |
|
| |
| *O<sub>2</sub>, H<sub>2</sub> and N<sub>2</sub>
| |
| |-
| |
| !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
| |
| |style="background:LightGrey; color:black"|Batch size
| |
| |style="background:WhiteSmoke; color:black"|
| |
| *1-30 4" wafer (or 2" wafers) per run
| |
| |-
| |
| | style="background:LightGrey; color:black"|Substrate material allowed
| |
| |style="background:WhiteSmoke; color:black"|
| |
| *Silicon wafers (new from the box or RCA cleaned)
| |
| *From A2 furnace directly (e.g. incl. Predep HF)
| |
| *In doubt: look at [http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1250 the cross contamination chart] or send a mail to [mailto:furnace@danchip.dtu.dk the Furnace group]
| |
| |-
| |
| |}
| |
|
| |
|
|
| |
|
