LabAdviser/Technology Research/Nanofabrication of Inductive Components for Integrated Power Supply On Chip/Air-core Inductor: Difference between revisions
Created page with "==Through-silicon Etching== {| border="1" cellspacing="1" cellpadding="3" style="text-align: left; width: 925px; height: 220px;" |- |- !colspan="2" border="none" style="bac..." |
|||
| Line 232: | Line 232: | ||
|ICP Isotropic etching of Si core (Hoa_ISO1 recipe) | |ICP Isotropic etching of Si core (Hoa_ISO1 recipe) | ||
|The specific parameters are: Gas flow (sccm) SF6 230, O2 23; Cycle time (secs) 3.0; Pressure (mtorr) 10; Coil Power (W) 2800; Platen Power (W) 3; Temperature: 20 oC, APC mode manual, APC setting: 87.7%. Etch rate 10 µm/min, etch time 80 min. | |The specific parameters are: Gas flow (sccm) SF6 230, O2 23; Cycle time (secs) 3.0; Pressure (mtorr) 10; Coil Power (W) 2800; Platen Power (W) 3; Temperature: 20 oC, APC mode manual, APC setting: 87.7%. Etch rate 10 µm/min, etch time 80 min. | ||
|[[Specific Process Knowledge/Etch/ASE|Advanced Silicon Etch]] | |[[Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch)|Advanced Silicon Etch]] | ||
|- | |- | ||