Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using LPCVD TEOS: Difference between revisions

The deposition rate is normally a little below 10 nm/min - See process log in LabManager. But especially for short depositions, the deposition rate is higher and depends on the deposition time. The main reason for this is that there is some TEOS (about 20-30 nm) being deposited during the pre- and post-deposition steps inte , and this does not count as deposition time. The pre-deposition step is when the TEOS is introduced into the furnace tube before the deposition, and the pre-deposition step is when the TEOS gas line and mass flow controller are emptied through the furnace tube after the deposition.