Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using LPCVD TEOS: Difference between revisions
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TEOS has compressive stress (around 100-300 MPa). | TEOS has compressive stress (around 100-300 MPa). | ||
==Using LPCVD TEOS as a masking material for KOH etching== | ==Using LPCVD TEOS oxide as a masking material for KOH etching== | ||
It is possible to use LPCVD TEOS pxide as a masking layer for KOH etching. However, it is not as suitable as LPCVD silicon nitride for deep KOH etching, as the the etch rate for TEOS oxide is higher than the etch rate for silicon nitride. | It is possible to use LPCVD TEOS pxide as a masking layer for KOH etching. However, it is not as suitable as LPCVD silicon nitride for deep KOH etching, as the the etch rate for TEOS oxide is higher than the etch rate for silicon nitride. | ||