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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using LPCVD TEOS: Difference between revisions

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On the furnace there are also two standby recipes, which are used for wafer loading and unloading. One standby recipe is called "STANDBY". The other standby recipe is called "STB-SLOW", and this is being used, if a thicker TEOS oxide layer (> 1 µm) is deposited, because the furnace then has to open slower to avoid stress and thus cracks in the deposited film.
On the furnace there are also two standby recipes, which are used for wafer loading and unloading. One standby recipe is called "STANDBY". The other standby recipe is called "STB-SLOW", and this is being used, if a thicker TEOS oxide layer (> 1 µm) is deposited, because the furnace then has to open slower to avoid stress and thus cracks in the deposited film.


==Process parameters for the two standard deposition recipes on the TEOS furnace:==
==Process parameters standard deposition recipes and the standby recipes on the TEOS furnace:==


{| border="1" cellspacing="0" cellpadding="4"  
{| border="1" cellspacing="0" cellpadding="4"  
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|-  
|-  
| "STANDBY" and "STB-SLOW"  
| "STANDBY" and "STB-SLOW"  
(standby recipe)
(standby recipes)
| 4" wafers
| 4" wafers
1-17 wafers
1-15 wafers
| 560  
| 560 <sup>o</sup>C
(wafer loading temperature)
(wafer loading temperature)
| Atmospheric pressure
| Atmospheric pressure
| 0
(wafer loading pressure)
| 0
| 0 sccm
| 0 sccm
| For wafer loading and unloading
| For wafer loading and unloading
|-
|-
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(deposition recipe)
(deposition recipe)
| 4" wafers
| 4" wafers
1-17 wafers
1-15 wafers
| 715, 712, 720  
| 715, 712, 720 <sup>o</sup>C
(temperature zone 1, 2, 3)
(temperature zone 1, 2, 3)
| 175
| 175 mTorr
| 50
| 50 sccm. <i>The exact flow is not know - the setpoint is much lower than 50 sccm, but the MFC is not calibrated for TEOS</i>
| 0
| 0 sccm
| Process recipe
| Process recipe
|}
|}


==Deposition rate and refractive index:==
==Deposition rate and refractive index:==