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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using LPCVD TEOS: Difference between revisions

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TEOS molecules have a very high surface mobility enabling the TEOS oxide to fill holes that have a large aspect ratio and leaving the surface quite smooth, see figure 2, hence it also covers corners and side walls very well. However very small nanometer trenched and/or very deep trenches will be challenging to fill.
TEOS molecules have a very high surface mobility enabling the TEOS oxide to fill holes that have a large aspect ratio and leaving the surface quite smooth, see figure 2, hence it also covers corners and side walls very well. However very small nanometer trenched and/or very deep trenches will be challenging to fill.


TEOS oxide has an amorphous crystal structure. If TEOS oxide is annealed at a high temperature, ~720 <sup>o</sup>C, the crystal structure becomes more dense, and thus the thickness decreases. The quality of an annealed TEOS oxide film is actually almost similar to the quality of a thermal oxide film.
TEOS oxide has an amorphous crystal structure. If TEOS oxide is annealed at a high temperature, ~1000 <sup>o</sup>C, carbon is removed, and the crystal structure becomes more dense, and thus the thickness decreases. The quality of an annealed TEOS oxide film is actually almost similar to the quality of a thermal oxide film.


There is one standard process for deposition of LPCVD TEOS oxide on the furnace, and this recipe is called "TEOS". The Thin Film group will have to be involved, if the depositions have to done with other process parameters. The exact TEOS flow is unfortunately not know, but it is expected to be much higher than the setpoint, because the MFC is not calibrated for TEOS (it has not been possible to buy a correctly calibrated MFC).
There is one standard process for deposition of LPCVD TEOS oxide on the furnace, and this recipe is called "TEOS". The Thin Film group will have to be involved, if depositions have to done with other process parameters. The exact TEOS flow is unfortunately not know, but it is expected to be much higher than the setpoint in the recipe, because the MFC is not calibrated for TEOS (it has not been possible to buy a correctly calibrated MFC).


On the furnace there are also two standby recipes, which are used for wafer loading and unloading. One standby recipe is called "STANDBY". The other standby recipe is called "STB-SLOW", and this is being used, if a thicker TEOS oxide layer (> 1 µm) is deposited, because the furnace then has to open slower to avoid stress and thus cracks in the deposited film.
On the furnace there are also two standby recipes, which are used for wafer loading and unloading. One standby recipe is called "STANDBY". The other standby recipe is called "STB-SLOW", and this is being used, if a thicker TEOS oxide layer (> 1 µm) is deposited, because the furnace then has to open slower to avoid stress and thus cracks in the deposited film.
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