Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Reactively sputtered SiO2 in Sputter-System Metal Oxide (PC1): Difference between revisions
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The presented spectra have been taken from the film that was clean-sputtered with Ar ions at 1000 eV, high-current, and 10s time exposure. | The presented spectra have been taken from the film that was clean-sputtered with Ar ions at 1000 eV, high-current, and 10s time exposure. | ||
<gallery caption="Figure 9. X-ray photoelectron spectroscopy." widths=" | <gallery caption="Figure 9. X-ray photoelectron spectroscopy." widths="270px" heights="250px" perrow="3"> | ||
image:eves_XPS_survey_20210809.png| SiO<sub>2</sub> survey scan. | image:eves_XPS_survey_20210809.png| SiO<sub>2</sub> survey scan. | ||
image:eves_XPS_Si_2p_20210809.png| Si 2p High-resolution scan. | image:eves_XPS_Si_2p_20210809.png| Si 2p High-resolution scan. | ||