Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Reactively sputtered SiO2 in Sputter-System Metal Oxide (PC1): Difference between revisions
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<gallery caption="Figure 8. Optical properties." widths=" | <gallery caption="Figure 8. Optical properties." widths="400px" heights="350px" perrow="2"> | ||
image:eves_SiO2_Cluster_Lesker_refractive_index.png| Refractive index of 120 nm SiO<sub>2</sub> prepared with 14 0W, 3 mTorr, 50 sccm Ar, 15 sccm O<sub>2</sub> and no substrate RF bias. Deposition time 5000s. | image:eves_SiO2_Cluster_Lesker_refractive_index.png| Refractive index of 120 nm SiO<sub>2</sub> prepared with 14 0W, 3 mTorr, 50 sccm Ar, 15 sccm O<sub>2</sub> and no substrate RF bias. Deposition time 5000s. | ||
image:eves_SiO2_Cluster_Lesker_absorption_coefficient.png| Absorption coefficient of 120 nm SiO<sub>2</sub> prepared with 140 W, 3 mTorr, 50 sccm Ar, 15 sccm O<sub>2</sub> and no substrate RF bias. Deposition time 5000s. | image:eves_SiO2_Cluster_Lesker_absorption_coefficient.png| Absorption coefficient of 120 nm SiO<sub>2</sub> prepared with 140 W, 3 mTorr, 50 sccm Ar, 15 sccm O<sub>2</sub> and no substrate RF bias. Deposition time 5000s. | ||