Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Reactively sputtered SiO2 in Sputter-System Metal Oxide (PC1): Difference between revisions
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The uniformity measurements were performed with 6-inch wafers <b>and installed closed darks space shield</b>, with three power settings (100W, 120W, and 140W). The pressure and gas flow remain the same. The measurements was conducted using [[Specific_Process_Knowledge/Characterization/Optical_characterization#Ellipsometer_VASE_and_Ellipsometer_M-2000V|VASE Ellipsometer]]. | The uniformity measurements were performed with 6-inch wafers <b>and installed closed darks space shield</b>, with three power settings (100W, 120W, and 140W). The pressure and gas flow remain the same. The measurements was conducted using [[Specific_Process_Knowledge/Characterization/Optical_characterization#Ellipsometer_VASE_and_Ellipsometer_M-2000V|VASE Ellipsometer]]. | ||
<gallery caption="Figure 6. Thickness uniformity across 150mm Si wafer." widths=" | <gallery caption="Figure 6. Thickness uniformity across 150mm Si wafer." widths="270px" heights="250px" perrow="3"> | ||
image:eves_Uniformity_SiO2_100W.png| 100W Power. Closed dark space shield is installed. Standard deviation <b>std=0.307</b>. Average thickness <b>65.26 nm</b>. | image:eves_Uniformity_SiO2_100W.png| 100W Power. Closed dark space shield is installed. Standard deviation <b>std=0.307</b>. Average thickness <b>65.26 nm</b>. | ||
image:eves_Uniformity_SiO2_120W.png| 120W Power. Closed dark space shield is installed. Standard deviation <b>std=0.314</b>. Average thickness <b>59.95 nm</b>. | image:eves_Uniformity_SiO2_120W.png| 120W Power. Closed dark space shield is installed. Standard deviation <b>std=0.314</b>. Average thickness <b>59.95 nm</b>. | ||