Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Reactively sputtered SiO2 in Sputter-System Metal Oxide (PC1): Difference between revisions
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The installation of a "closed" dark space shield will completely prevent cross-contamination but will lower the deposition rate. Additionally, the lower pressure (below 3 mTorr) processes can be problematic to run due to the plasma instability. | The installation of a "closed" dark space shield will completely prevent cross-contamination but will lower the deposition rate. Additionally, the lower pressure (below 3 mTorr) processes can be problematic to run due to the plasma instability. | ||
<gallery caption="Figure 5. Two different dark space shield configurations." widths=" | <gallery caption="Figure 5. Two different dark space shield configurations." widths="400px" heights="350px" perrow="2"> | ||
image:eves_opened_dark_space_shield.png| Opened dark space shield is installed. | image:eves_opened_dark_space_shield.png| Opened dark space shield is installed. | ||
image:eves_closed_dark_space_shield.png| Closed dark space shield is installed. | image:eves_closed_dark_space_shield.png| Closed dark space shield is installed. | ||