Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Reactively sputtered SiO2 in Sputter-System Metal Oxide (PC1): Difference between revisions
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No significant influence has been observed. However, the temperature does not remain constant, it oscillated back and forth and is controlled by PID parameters. | No significant influence has been observed. However, the temperature does not remain constant, it oscillated back and forth and is controlled by PID parameters. | ||
<gallery caption="Figure 3. Different substarte temperatures. No RF bias." widths=" | <gallery caption="Figure 3. Different substarte temperatures. No RF bias." widths="270px" heights="250px" perrow="3"> | ||
image:eves_SiO2_20C.png| Deposition at room temperature. RF bias is not applied. | image:eves_SiO2_20C.png| Deposition at room temperature. RF bias is not applied. | ||
image:eves_SiO2_200C.png|Deposition at 200°C. RF bias is not applied. | image:eves_SiO2_200C.png|Deposition at 200°C. RF bias is not applied. | ||