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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Reactively sputtered SiO2 in Sputter-System Metal Oxide (PC1): Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
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Eves (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,346 edits
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<gallery caption="Figure 2. Temparature changes without control during the RF substarte bias process." widths="600px" heights="400px" perrow="1">
<gallery caption="Figure 2. Temparature changes without control during the RF substarte bias process." widths="400px" heights="200px" perrow="1">
image:eves_RF_bias_and_temperature_PC1_2021.png|Temperature fluctuations.
image:eves_RF_bias_and_temperature_PC1_2021.png|Temperature fluctuations.
</gallery>
</gallery>
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