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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Reactively sputtered SiO2 in Sputter-System Metal Oxide (PC1): Difference between revisions

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It was soon realized that the power values below 20W were not optimal due to process instability. Only at 20W and above the reflected power was almost at 0W. For this reason, the RF bias power of 20W, 30W, 40W, and 50W was tested and compared. The results are present in the figure below:
It was soon realized that the power values below 20W were not optimal due to process instability. Only at 20W and above the reflected power was almost at 0W. For this reason, the RF bias power of 20W, 30W, 40W, and 50W was tested and compared. The results are present in the figure below:
<gallery caption="Figure 1. Different RF bias on a substarte." widths="500px" heights="400px" perrow="3">
<gallery caption="Figure 1. Different RF bias on a substarte." widths="270px" heights="250px" perrow="3">
image:eves_SiO2_0W_RF.png| Deposition without RF bias.
image:eves_SiO2_0W_RF.png| Deposition without RF bias.
image:eves_SiO2_20W_RF.png|Deposition with 20 W RF bias.
image:eves_SiO2_20W_RF.png|Deposition with 20 W RF bias.
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