Jump to content

Specific Process Knowledge/Thin film deposition/Deposition of Scandium Nitride/ScN Reactive Sputtering in Cluster Lesker PC3: Difference between revisions

← Older editNewer edit →
VisualWikitext
Eves (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,346 edits
Eves (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,346 edits
Line 515: Line 515:
image:eves_XPS_ScN_PC3_Src1_RF_Sc_3s_fit_2031019.png|<b>Sc 3s</b> signal with fitted functions. Useful for stoichiometry calculation, due to the profile simplicity. The film has been etched for 160s wiht Ar<sup>+</sup> ions at low current and 1000eV energy before the scan.
image:eves_XPS_ScN_PC3_Src1_RF_Sc_3s_fit_2031019.png|<b>Sc 3s</b> signal with fitted functions. Useful for stoichiometry calculation, due to the profile simplicity. The film has been etched for 160s wiht Ar<sup>+</sup> ions at low current and 1000eV energy before the scan.
image:eves_XPS_ScN_PC3_Src1_RF_O_s1_fit_2031019.png|<b>O 1s</b> signal with fitted functions. The film has been etched for 160s wiht Ar<sup>+</sup> ions at low current and 1000eV energy before the scan.
image:eves_XPS_ScN_PC3_Src1_RF_O_s1_fit_2031019.png|<b>O 1s</b> signal with fitted functions. The film has been etched for 160s wiht Ar<sup>+</sup> ions at low current and 1000eV energy before the scan.
image:eves_XPS_ScN_PC3_Src1_RF_Sc2p_and_N1s_fit_2031019.png|<b>Sc 2p</b> and <b>N 1s </b> (in yellow) signals with fitted functions. Less useful for stoichiometry calculation, due to the profile complexity. N1s is dangerously close to Sc 2p, and need to be deconvolved. The film has been etched for 160s wiht Ar<sup>+</sup> ions at low current and 1000eV energy before the scan.
image:eves_XPS_ScN_PC3_Src1_RF_Sc2p_and_N1s_fit_2031019.png|<b>Sc 2p</b> and <b>N 1s</b> (in yellow) signals with fitted functions. Less useful for stoichiometry calculation, due to the profile complexity. N1s is dangerously close to Sc 2p, and need to be deconvolved. The film has been etched for 160s wiht Ar<sup>+</sup> ions at low current and 1000eV energy before the scan.
image:eves_XPS_ScN_PC3_Src1_RF_N_s1_fit_2031019_new.png|<b>N 1s </b> (in yellow) signal with fitted functions, where <b>Sc 2p</b> is also present (grey fitted area). Difficult for stoichiometry calculation, due to the profile complexity. N1s is dangerously close to Sc 2p, and need to be deconvolved. However, there are no other electronic states of nitrogen that can be used in XPS, so the deconvolution approach is the only option. The film has been etched for 160s with Ar<sup>+</sup> ions at low current and 1000eV energy before the scan.
image:eves_XPS_ScN_PC3_Src1_RF_N_s1_fit_2031019_new.png|<b>N 1s</b> (in yellow) signal with fitted functions, where <b>Sc 2p</b> is also present (grey fitted area). Difficult for stoichiometry calculation, due to the profile complexity. N1s is dangerously close to Sc 2p, and need to be deconvolved. However, there are no other electronic states of nitrogen that can be used in XPS, so the deconvolution approach is the only option. The film has been etched for 160s with Ar<sup>+</sup> ions at low current and 1000eV energy before the scan.
</gallery>
</gallery>


<gallery caption="X-ray reflectivity scans of Sc thin films (PC3 Src1). " widths="450px" heights="400px" perrow="3">
<gallery caption="X-ray Photoelectron Spectroscopy of ScN thin films (PC3 Src1). High resolution scans during the Ar ion etch (depth-profiles)." widths="450px" heights="400px" perrow="3">
image:eves_XPS_ScN_PC3_Src1_RF_Sc2p_and_N1s_2031019.png|Sc thin film XRR. Power: 200W, Deposition time: 500s, Pressure 3 mTorr. PC Gun Z-shift Position: Extended (95.20 mm).
image:eves_XPS_ScN_PC3_Src1_RF_Sc2p_and_N1s_2031019.png|<b>Sc 2p</b> and<b>N 1s</b> signals. 30 levels in total. 20s of etch with Ar<sup>+</sup> ions at low current and 1000eV energy between the measurements.
image:eves_XPS_ScN_PC3_Src1_RF_Sc_3s_2031019.png|Sc thin film XRR. Power: 200W, Deposition time: 750s, Pressure 3 mTorr. PC Gun Z-shift Position: Extended (95.20 mm).
image:eves_XPS_ScN_PC3_Src1_RF_Sc_3s_2031019.png|<b>Sc 3s</b> signal. 30 levels in total. 20s of etch with Ar<sup>+</sup> ions at low current and 1000eV energy between the measurements.
image:eves_XPS_ScN_PC3_Src1_RF_O_s1_2031019.png|Sc thin film XRR. Power: 200W, Deposition time: 750s, Pressure 3 mTorr. PC Gun Z-shift Position: Extended (95.20 mm).
image:eves_XPS_ScN_PC3_Src1_RF_O_s1_2031019.png|<b>O 1s</b> signal. 30 levels in total. 20s of etch with Ar<sup>+</sup> ions at low current and 1000eV energy between the measurements.
image:eves_XPS_ScN_PC3_Src1_RF_C_s1_2031019.png|Sc thin film XRR. Power: 200W, Deposition time: 1000s, Pressure 3 mTorr. PC Gun Z-shift Position: Extended (95.20 mm).
image:eves_XPS_ScN_PC3_Src1_RF_C_s1_2031019.png|<b>C 1s</b> signal. 30 levels in total. 20s of etch with Ar<sup>+</sup> ions at low current and 1000eV energy between the measurements.
</gallery>
</gallery>


<gallery caption="X-ray reflectivity scans of Sc thin films (PC3 Src1). " widths="450px" heights="400px" perrow="3">
<gallery caption="X-ray Photoelectron Spectroscopy of ScN thin films (PC3 Src1).  2-Dimensional depth profiles." widths="450px" heights="400px" perrow="3">
image:eves_XPS_2D_ScN_Sc2p_and_N1s_PC3_Src1_RF_20231018.png|Sc thin film XRR. Power: 200W, Deposition time: 500s, Pressure 3 mTorr. PC Gun Z-shift Position: Home (00.00 mm).
image:eves_XPS_2D_ScN_Sc2p_and_N1s_PC3_Src1_RF_20231018.png|2D profile of <b>Sc 2p</b> and <b>N 1s</b> signals. 30 levels in total. 20s of etch with Ar<sup>+</sup> ions at low current and 1000eV energy between the measurements.
image:eves_XPS_2D_ScN_Sc3s_PC3_Src1_RF_20231018.png|Sc thin film XRR. Power: 200W, Deposition time: 500s, Pressure 3 mTorr. PC Gun Z-shift Position: Home (00.00 mm).
image:eves_XPS_2D_ScN_Sc3s_PC3_Src1_RF_20231018.png|2D profile of <b>Sc 3s</b> signal. 30 levels in total. 20s of etch with Ar<sup>+</sup> ions at low current and 1000eV energy between the measurements.
image:eves_XPS_2D_ScN_O1s_PC3_Src1_RF_20231018.png|Sc thin film XRR. Power: 150W, Deposition time: 750s, Pressure 3 mTorr. PC Gun Z-shift Position: Home (00.00 mm).
image:eves_XPS_2D_ScN_O1s_PC3_Src1_RF_20231018.png|2D profile of <b>O 1s</b> signal. 30 levels in total. 20s of etch with Ar<sup>+</sup> ions at low current and 1000eV energy between the measurements.
image:eves_XPS_2D_ScN_C1s_PC3_Src1_RF_20231018.png|Sc thin film XRR. Power: 100W, Deposition time: 1000s, Pressure 3 mTorr. PC Gun Z-shift Position: Home (00.00 mm).
image:eves_XPS_2D_ScN_C1s_PC3_Src1_RF_20231018.png|2D profile of <b>C 1s</b> signal. 30 levels in total. 20s of etch with Ar<sup>+</sup> ions at low current and 1000eV energy between the measurements.
</gallery>
</gallery>


Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Scandium_Nitride/ScN_Reactive_Sputtering_in_Cluster_Lesker_PC3"