Specific Process Knowledge/Thin film deposition/Deposition of Scandium Nitride/ScN Reactive Sputtering in Cluster Lesker PC3: Difference between revisions
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The Sc target used in the experiment was new, and due to its susceptibility to oxidation, there is a possibility of a pronounced level of Scandium oxynitride formation. We believe that more extensive usage of the target will remove the oxidized top layer. Additionally, it is necessary to perform preconditioning (pre-sputtering) of the target before using it in applications. This pre-sputtering process will help minimize the oxygen level in the resulting film. | The Sc target used in the experiment was new, and due to its susceptibility to oxidation, there is a possibility of a pronounced level of Scandium oxynitride formation. We believe that more extensive usage of the target will remove the oxidized top layer. Additionally, it is necessary to perform preconditioning (pre-sputtering) of the target before using it in applications. This pre-sputtering process will help minimize the oxygen level in the resulting film. | ||
<gallery caption="X-ray | <gallery caption="X-ray Photoelectron Spectroscopy of ScN thin films (PC3 Src1). High resolution scans fitted with Lorentz-Gaussian functions." widths="450px" heights="400px" perrow="3"> | ||
image:eves_XPS_ScN_PC3_Src1_RF_Survej_2031019.png|Survey spectrum of ScN thin film. The films has been etched for 160s wiht Ar<sup>+</sup> ions at low current and 1000eV energy. | image:eves_XPS_ScN_PC3_Src1_RF_Survej_2031019.png|Survey spectrum of ScN thin film. The films has been etched for 160s wiht Ar<sup>+</sup> ions at low current and 1000eV energy. | ||
image:eves_XPS_ScN_PC3_Src1_RF_Sc_3s_fit_2031019.png|<b>Sc 3s</b> signal with fitted functions. Useful for stoichiometry calculation, due to the profile simplicity. The film has been etched for 160s wiht Ar<sup>+</sup> ions at low current and 1000eV energy before the scan. | image:eves_XPS_ScN_PC3_Src1_RF_Sc_3s_fit_2031019.png|<b>Sc 3s</b> signal with fitted functions. Useful for stoichiometry calculation, due to the profile simplicity. The film has been etched for 160s wiht Ar<sup>+</sup> ions at low current and 1000eV energy before the scan. | ||