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Specific Process Knowledge/Thin film deposition/Deposition of Scandium Nitride/ScN Reactive Sputtering in Cluster Lesker PC3: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
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<gallery caption="X-ray reflectivity scans of Sc thin films (PC3 Src1). " widths="450px" heights="400px" perrow="3">
<gallery caption="X-ray reflectivity scans of Sc thin films (PC3 Src1). " widths="450px" heights="400px" perrow="3">
image:eves_XPS_ScN_PC3_Src1_RF_Survej_2031019.png|Survey spectrum of ScN thin film. The films has been etched for 160s wiht Ar<sup>+</sup> ions at low current and 1000eV energy.
image:eves_XPS_ScN_PC3_Src1_RF_Survej_2031019.png|Survey spectrum of ScN thin film. The films has been etched for 160s wiht Ar<sup>+</sup> ions at low current and 1000eV energy.
image:eves_XPS_ScN_PC3_Src1_RF_Sc_3s_fit_2031019.png|<b>Sc 3s</b> signal with fitted functions. Useful for stoichiometry calculation, due to the profile simplicity. The films has been etched for 160s wiht Ar<sup>+</sup> ions at low current and 1000eV energy before the scan
image:eves_XPS_ScN_PC3_Src1_RF_Sc_3s_fit_2031019.png|<b>Sc 3s</b> signal with fitted functions. Useful for stoichiometry calculation, due to the profile simplicity. The films has been etched for 160s wiht Ar<sup>+</sup> ions at low current and 1000eV energy before the scan.
image:eves_XPS_ScN_PC3_Src1_RF_O_s1_fit_2031019.png|Sc thin film XRR. Power: 200W, Deposition time: 500s, Pressure 3 mTorr. PC Gun Z-shift Position: Home (00.00 mm).
image:eves_XPS_ScN_PC3_Src1_RF_O_s1_fit_2031019.png|Sc thin film XRR. Power: 200W, Deposition time: 500s, Pressure 3 mTorr. PC Gun Z-shift Position: Home (00.00 mm).
image:eves_XPS_ScN_PC3_Src1_RF_Sc2p_and_N1s_fit_2031019.png|Sc thin film XRR. Power: 150W, Deposition time: 750s, Pressure 3 mTorr. PC Gun Z-shift Position: Home (00.00 mm).
image:eves_XPS_ScN_PC3_Src1_RF_Sc2p_and_N1s_fit_2031019.png|Sc thin film XRR. Power: 150W, Deposition time: 750s, Pressure 3 mTorr. PC Gun Z-shift Position: Home (00.00 mm).
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