Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Boron doped poly-Si and a-Si: Difference between revisions
Appearance
No edit summary |
|||
| Line 1: | Line 1: | ||
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Furnace_LPCVD_PolySilicon/Boron_doped_poly-Si_and_a-Si click here]''' | '''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Furnace_LPCVD_PolySilicon/Boron_doped_poly-Si_and_a-Si click here]''' | ||
<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i> | |||
==Boron-doped amorphous silicon by using 4" LPCVD polysilicon furnace (B4) == | ==Boron-doped amorphous silicon by using 4" LPCVD polysilicon furnace (B4) == | ||