Jump to content

Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions

← Older editNewer edit →
VisualWikitext
Morgi (talk | contribs)
danchip
1 edit
No edit summary
BGE (talk | contribs)
Bureaucrats, danchip, Administrators
2,908 edits
Line 106: Line 106:
|Stress [MPa]
|Stress [MPa]
|KOH etch rate [Å/min]
|KOH etch rate [Å/min]
|BHF etch rate [Å/min]
|-  
|-  
|MFSiNLS
|MFSiNLS
Line 113: Line 114:
|~-30
|~-30
|~2.5
|~2.5
|~250
|-
|-
|LFSiN
|LFSiN
Line 119: Line 121:
|~3
|~3
|~-630
|~-630
|
|.
|.
|-
|-
|HFSiN
|HFSiN
Line 126: Line 129:
|~2
|~2
|~460
|~460
|
|.
|.
|-
|-
|}
|}
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Nitride/Deposition_of_Silicon_Nitride_using_PECVD"