Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions
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New page: At the moment DANCHIP has 3 PECVDs that can deposite silicon nitride and silicon oxynitride. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and will be ... |
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At the moment DANCHIP has 3 PECVDs that can deposite silicon nitride and silicon oxynitride. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and will be describes under III-V processing. Look at the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] page to learn more about the PECVDs at DANCHIP. All though PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system. | At the moment DANCHIP has 3 PECVDs that can deposite silicon nitride and silicon oxynitride. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and will be describes under III-V processing. Look at the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] page to learn more about the PECVDs at DANCHIP. All though PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system. | ||
==Recipes on PECVD1 for deposition of silicon nitride and silicon oxynitride== | |||
==Recipes on PECVD3 for deposition of silicon nitride and silicon oxynitride== | |||
===Recipes=== | |||
{| border="1" cellspacing="0" cellpadding="7" | |||
|- | |||
|Recipe name | |||
|SiH4 flow [sccm] | |||
|NH3 flow [sccm] | |||
|N2 flow [sccm] | |||
|Pressure [mTorr] | |||
|Power [W] | |||
|Description | |||
|- | |||
|MFSiNLS | |||
|30 | |||
|30 | |||
|1470 | |||
|650 | |||
|20HF 6s/20LF 2s | |||
|Low stress nitride - standard recipe | |||
|- | |||
|LFSiN | |||
|30 | |||
|15 | |||
|1470 | |||
|550 | |||
|60LF | |||
|Compressive stress | |||
|- | |||
|HFSiN | |||
|30 | |||
|42 | |||
|1470 | |||
|900 | |||
|20HF | |||
|Tensile stress | |||
|- | |||
|} | |||
LF=Low Frequency HF=High Frequency MF=Mixed Frequency SiN=Silicon Nitride LS=Low Stress | |||
===Expected results=== | |||
{| border="1" cellspacing="0" cellpadding="5" | |||
|- | |||
|Recipe name | |||
|Deposition rate [Å/min] | |||
|RI | |||
|Uniformity [%] | |||
|Stress [MPa] | |||
|- | |||
|MFSiNLS | |||
|~117 | |||
|~1.99 | |||
| | |||
|~-30 | |||
|- | |||
|LFSiN | |||
|~550 | |||
|~1.96 | |||
|~3 | |||
|~-630 | |||
|- | |||
|HFSiN | |||
|~130 | |||
|~1.97 | |||
|~2 | |||
|~460 | |||
|- | |||
|} | |||