Specific Process Knowledge/Thin film deposition/Deposition of Tungsten/Sputtering of W in Sputter Coater 3: Difference between revisions
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==X-ray Reflectivity== | ==X-ray Reflectivity== | ||
The samples used for X-ray analysis (Instrument: XRD SmartLab) were prepared in a big glass chamber with 80mA current and a deposition time of 300s. | The samples used for X-ray analysis (Instrument: [[Specific Process Knowledge/Characterization/XRD/XRD_SmartLab|XRD SmartLab]]) were prepared in a big glass chamber with 80mA current and a deposition time of 300s. | ||
X-ray reflectivity (XRR) profiles for W films at two different positions on the 100mm wafer have been obtained using the Rigaku XRD SmartLab equipment. The voltage and current settings for the Cu X-ray tube were standard 40kV and 30mA. The incident optics contained a IPS (incident parallel slit) adaptor with 5 ° Soller slit. Other slits: IS=0.03mm RS1=0.03mm and RS2=0.075mm. Step size: 0.01 and measurement time - 5s for each point. Fitting procesure was performed using the commercial GlobalFit software assuming the model based on a Si substrate with native oxide followed by the deposited W film with thin oxides and moisture surfaces. The results are summarized in a table below. | X-ray reflectivity (XRR) profiles for W films at two different positions on the 100mm wafer have been obtained using the Rigaku XRD SmartLab equipment. The voltage and current settings for the Cu X-ray tube were standard 40kV and 30mA. The incident optics contained a IPS (incident parallel slit) adaptor with 5 ° Soller slit. Other slits: IS=0.03mm RS1=0.03mm and RS2=0.075mm. Step size: 0.01 and measurement time - 5s for each point. Fitting procesure was performed using the commercial GlobalFit software assuming the model based on a Si substrate with native oxide followed by the deposited W film with thin oxides and moisture surfaces. The results are summarized in a table below. | ||