Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions
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At the moment DTU Nanolab has 2 PECVDs that can deposit silicon nitride and silicon oxynitride. PECVD4 is for clean silicon based and III-V based samples. PECVD3 is for silicon based samples but here up 5% (4 cm2) wafer coverage of other materials as metals are allowed. Look at the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] page to learn more about the PECVDs at DTU Nanolab. All though PECVD3 and PECVD4 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system. | At the moment DTU Nanolab has 2 PECVDs that can deposit silicon nitride and silicon oxynitride. PECVD4 is for clean silicon based and III-V based samples. PECVD3 is for silicon based samples but here up 5% (4 cm2) wafer coverage of other materials as metals are allowed (under some conditions even more). Look at the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] page to learn more about the PECVDs at DTU Nanolab. All though PECVD3 and PECVD4 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system. | ||
== Deposition of SiN with PECVD4 == | == Deposition of SiN with PECVD4 == | ||