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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using LPCVD TEOS: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
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Pevo (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
2,329 edits
Line 32: Line 32:
!Pressure [mTorr]
!Pressure [mTorr]
!TEOS gas flow [sccm]
!TEOS gas flow [sccm]
!O<math>_2</math> gas flow [sccm]
!O<sub>2</sub> gas flow [sccm]
!PH<math>_3</math> gas flow [sccm]
!TMB gas flow [sccm]
!Comments
!Comments
|-  
|-  
Line 40: Line 38:
(standby recipe)
(standby recipe)
| 4" wafers
| 4" wafers
1-17 wafers in a run
1-17 wafers
| 560  
| 560  
(wafer loading temperature)
(wafer loading temperature)
| Atmosphere
| Atmospheric pressure
| 0
| 0
| 0
| 0
| 0
| For wafer loading and unloading
| 0
| For load and unload the wafers
|-
|-
| "TEOS"  
| "TEOS"  
(deposition recipe)
(deposition recipe)
| 4" wafers
| 4" wafers
1-17 wafers in a run
1-17 wafers
| 715, 712, 720  
| 715, 712, 720  
(temperature zone 1, 2, 3)
(temperature zone 1, 2, 3)
| 175
| 175
| 50
| 50
| 0
| 0
| 0
| 0
| Process recipe
| Process recipe
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