Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using Lesker sputter tool: Difference between revisions
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==SiO<sub>2</sub> Reactive RF Sputtering from Si target== | ==SiO<sub>2</sub> Reactive RF Sputtering from Si target== | ||
This page presents the results of reactive SiO<sub>2</sub> deposition using <b>RF sputtering</b> with oxygen in Sputter-System Lesker, now commonly known as "Old Lesker". The deposition target is <b>Si</b>. Source #5 (RF) was used. R-RF SiO<sub>2</sub> is commonly used for the dielectric layers, especially if lift-off is needed. | This page presents the results of reactive SiO<sub>2</sub> deposition using <b>R-RF sputtering</b> with oxygen in Sputter-System Lesker, now commonly known as "Old Lesker". The deposition target is <b>Si</b>. Source #5 (RF) was used. R-RF SiO<sub>2</sub> is commonly used for the dielectric layers, especially if lift-off is needed. | ||
The fabrication and characterization described below were conducted in <b>18 of March 2022 by Evgeniy Shkondin, DTU Nanolab</b>. The prepared samples were investigated by the Spectroscopic Ellipsometry. The Sellmeier optical model is used. The focus of the study was the deposition conditions for possible backup in case of Cluster Lesker failure. | The fabrication and characterization described below were conducted in <b>18 of March 2022 by Evgeniy Shkondin, DTU Nanolab</b>. The prepared samples were investigated by the Spectroscopic Ellipsometry. The Sellmeier optical model is used. The focus of the study was the deposition conditions for possible backup in case of Cluster Lesker failure. | ||