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=Sputter deposition of SiO<sub>2</sub> using Sputter-System (Lesker)=
=Sputter deposition of SiO<sub>2</sub> using Sputter-System (Lesker)=


SiO<sub>2</sub> can be sputter deposited with RF bias in the Sputter-System (Lesker). You will find information on the pressure, max power and expected deposition rate on the [[Specific_Process_Knowledge/Thin_film_deposition/Lesker|Equipment page]] here in LabAdviser. To see the deposition parameters used by others, search the [http://labmanager.dtu.dk/function.php?module=Processlog&view=editlog&machid=244 Process Log] in LabManager.  
SiO<sub>2</sub> can be sputter deposited in the Sputter-System (Lesker). You will find information on the pressure, max power and expected deposition rate on the [[Specific_Process_Knowledge/Thin_film_deposition/Lesker|Equipment page]] here in LabAdviser. To see the deposition parameters used by others, search the [http://labmanager.dtu.dk/function.php?module=Processlog&view=editlog&machid=244 Process Log] in LabManager.
 
 
==SiO<sub>2</sub> Reacrive RF Sputtering from Si target==
 
This page presents the results of reactive SiO<sub>2</sub> deposition using <b>RF sputtering</b> with oxygen in Sputter-System Lesker, now commonly known as "Old Lesker". The deposition target is <b>Si</b>. Source #5 (RF) was used. R-RF SiO<sub>2</sub> is commonly used for the dielectric layers, especially if lift-off is needed.
 
The fabrication and characterization described below were conducted in <b>18 of March 2022 by Evgeniy Shkondin, DTU Nanolab</b>. The prepared samples were investigated by the Spectroscopic Ellipsometry. The Sellmeier optical model is used. The focus of the study was the deposition conditions for possible backup in case of Cluster Lesker failure.
 
 
The process recipe in a Sputter-System (Lesker) is following:
 
 
* Deposition type: <b>R-RF</b>
* Power: <b>90 W</b>.
* Pressure: <b>3 mTorr</b>
* Gas: <b>10% of O<sub>2</sub> in Ar</b>
* Deposition time: <b>7200 s.</b>
* Temperature: 20&deg;C (no heating)
* Measured DC bias: 400V
 
Measured thickness: 170nm for 7200s (Measured by Spectroscopic Ellipsometry. The substrate used: 100mm Si wafer)
 
<br>
<!-- -->
* Deposition Rate: <b><span style="color: red">0.023 nm/s</span></b>
<br>
<!-- -->
 
 
<gallery caption="Uniformity measurements and optical function." widths="500px" heights="500px" perrow="2">
image:eves_SiO2_R-RF_old_Lesker_20220110.png| Uniformity across 100 wafer.
image:eves_refractive_index_SiO2_old_lesker_R-RF_20220718.png| Measured refractive index.
</gallery>
 
 
 
{| border="2" cellspacing="2" cellpadding="5"  align="center"
|-
!colspan="5" border="none" style="background:silver; color:black;" align="center"| Deposition results on 150mm wafers
|-
!Time (s)
|<b>Average thickness (nm)</b>
|<b>Standard deviation error</b>
|<b>Minimum thickness (nm)</b>
|<b>Maximum thickness (nm)</b>
 
|-
|7200
|168.85
|4.55
|163.21
|177.23
 
 
|-
|}
 
 
 
Two important notes:
 
* <b><span style="color: green">1</span></b>. Keep the pressure around 3 mTorr. If pressure increases to 5mTorr the deposition rate will suffer so practically the sputtering stops.
 
 
* <b><span style="color: green">2</span></b>. Do not increase oxygen levels above 10% for the same reason as above.
 
 
 
==Non reactive SiO<sub>2</sub> deposition from SiO<sub>2</sub> target==
 
SiO<sub>2</sub> can also be sputtered directly from SiO<sub>2</sub> target with RF bias assistance in the Sputter-System (Lesker).


Below you will find the deposition parameters and results of a study on the  surface roughness and oxide insulation quality of the sputtered SiO<sub>2</sub>.
Below you will find the deposition parameters and results of a study on the  surface roughness and oxide insulation quality of the sputtered SiO<sub>2</sub>.


==Surface roughness optimization==
==Surface roughness optimization==
''By Bjarke Thomas Dalslet @Nanotech.dtu.dk''
''By <b>Bjarke Thomas Dalslet @Nanotech.dtu.dk</b>''


The Lesker CMS 18 sputter system provides thin films of varying surface roughness. This roughness was verified to be dependent on the sputtered material, sputter mode (DC or RF) and the substrate bias strength. Other probable factors include sputter power and pressure. Below is a table of results for SiO<sub>2</sub>. Similar studies were carried out for [http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon/Si_sputter_in_Sputter-System_Lesker Si] and [http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Tantalum/Sputtering_of_Ta Ta].
The Lesker CMS 18 sputter system provides thin films of varying surface roughness. This roughness was verified to be dependent on the sputtered material, sputter mode (DC or RF) and the substrate bias strength. Other probable factors include sputter power and pressure. Below is a table of results for SiO<sub>2</sub>. Similar studies were carried out for [http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon/Si_sputter_in_Sputter-System_Lesker Si] and [http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Tantalum/Sputtering_of_Ta Ta].
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