Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Reactively sputtered SiO2 in Sputter-System Metal Oxide (PC1): Difference between revisions
Created page with " =Reactive sputtering of SiO<sub>2</sub>= This page presents the results of SiO<sub>2</sub> deposition using <b>RF reactive sputtering</b> in [[Specific_Process_Knowledge/Thi..." |
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=Wet etch attempt= | =Wet etch attempt= | ||
It is important to find the procedure to etch the deposited materials. In the case of reactively sputtered SiO<sub>2</sub>, it showed up to be challenging to apply wet chemistry methods. Normally, one would prepare BHF or HF solutions to do that, and indeed they are quite good if the final result is the complete dissolution of the | It is important to find the procedure to etch the deposited materials. In the case of reactively sputtered SiO<sub>2</sub>, it showed up to be challenging to apply wet chemistry methods. Normally, one would prepare BHF or HF solutions to do that, and indeed they are quite good if the final result is the complete dissolution of the deposited film, but if the user would like to etch to a certain thickness it is not possible. | ||
To investigate the etch rate (or in general the SiO<sub>2</sub> film behavior in HF-based solutions) the mask was designed in [[Specific_Process_Knowledge/Pattern_Design/CleWin|CleWin5 software]]. The [[Specific_Process_Knowledge/Lithography/5214E|AZ 5214E]] was spin-coated to the thickness of 2.2 µm in [[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_UV|Spin Coater: Gamma UV]] and exposed in [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_Maskless_02|MLA-2 system]], followed by 60s. development in [[Specific_Process_Knowledge/Lithography/Development#Developer_TMAH_UV-lithography|Developer TMAH UV-lithography]]. | To investigate the etch rate (or in general the SiO<sub>2</sub> film behavior in HF-based solutions) the mask was designed in [[Specific_Process_Knowledge/Pattern_Design/CleWin|CleWin5 software]]. The [[Specific_Process_Knowledge/Lithography/5214E|AZ 5214E]] was spin-coated to the thickness of 2.2 µm in [[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_UV|Spin Coater: Gamma UV]] and exposed in [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_Maskless_02|MLA-2 system]], followed by 60s. development in [[Specific_Process_Knowledge/Lithography/Development#Developer_TMAH_UV-lithography|Developer TMAH UV-lithography]]. | ||